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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO PARAMETER CONDITIONS 2SB1069 Collector-base voltage VCEO VEBO IC ICM HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE 2SB1069A 2SB1069 2SB1069A Open emitter OND IC TOR UC VALUE -40 -50 -20 -40 -5 -4 -8 UNIT V Open base V Open collector V A A Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.4 W 25 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB1069 V(BR)CEO Collector-emitter breakdown voltage 2SB1069A VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=-2A; IB=-0.1A IC=-2A; IB=-0.1A VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-1A ; VCE=-2V IC=-0.5A ; VCE=-5V IC=-10mA ,IB=0 CONDITIONS 2SB1069 2SB1069A SYMBOL MIN -20 TYP. MAX UNIT V -40 -0.5 -1.5 -50 -50 45 60 260 150 |I |I V V A A Switching times ton tstg tf Transition frequency ANG CH P 130-260 Turn-on time Storage time Fall time IN Q EMIC ES IC=-2A; IB1=-IB2=-0.2A DUC ON TOR MHz 0.3 0.4 0.1 |I |I s s |I s hFE-2 classifications R 60-120 90-180 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1069 2SB1069A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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